Optically pumped laser oscillation at 3. 9. mu. m from Al/sub 0. 5/Ga/sub 0. 5/ Sb/InAs/sub 0. 91/Sb/sub 0. 09//Al/sub 0. 5/Ga/sub 0. 5/Sb double heterostructures grown by molecular beam epitaxy on GaSb

Journal Article · Mon Feb 03 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96537· OSTI ID:6442859

van der Ziel, J P; Chiu, T H; Tsang, W T

Double heterostructures consisting of InAs/sub 0.91/ Sb/sub 0.09/ active layers with Al/sub 0.5/ Ga/sub 0.5/Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates. Optically pumped laser emission at 3.9 ..mu..m was observed from 80 to 135 K with an exponentially dependent threshold with T/sub 0/ = 17 K. At 80 K the threshold corresponds to an effective current of 4 kA/cm/sup 2/. This value represents a significant reduction when compared with previous results. For a 1-..mu..m-thick active layer the full angular width of the far field at the half intensity point normal to the junction is 40/sup 0/ and is in reasonable agreement with the width calculated from the guide and cladding refractive indices.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6442859
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ANTIMONY COMPOUNDS
LASER RADIATION
MOLECULAR BEAM EPITAXY
OPTICAL PUMPING
STIMULATED EMISSION
GALLIUM ANTIMONIDES
VAPOR DEPOSITED COATINGS
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
BEAM PROFILES
FABRICATION
EXPERIMENTAL DATA
INFRARED RADIATION
LOW TEMPERATURE
REFRACTIVITY
THRESHOLD CURRENT
VERY LOW TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)