Heteroepitaxial diamond formed on silicon wafer observed by high resolution electron microscopy
Conference
·
OSTI ID:94060
- Chinese Academy of Sciences, Beijing (China)
Diamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HF-CVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterize the structure and morphology of the synthesized diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographs show that plane diamond crystals have been obtained.
- OSTI ID:
- 94060
- Report Number(s):
- CONF-941144--; ISBN 1-55899-258-8
- Country of Publication:
- United States
- Language:
- English
Similar Records
Diamond nucleation and growth on mirror-polish silicon wafer pretreated by silicon ion implantation
Electron microscopy of vapor phase deposited diamond
Analysis of the surface structure of HFCVD diamond films
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:230068
Electron microscopy of vapor phase deposited diamond
Journal Article
·
Sat Mar 31 23:00:00 EST 1990
· Journal of Materials Research; (USA)
·
OSTI ID:6753285
Analysis of the surface structure of HFCVD diamond films
Technical Report
·
Sat Jul 01 00:00:00 EDT 1995
·
OSTI ID:106570