Diamond nucleation and growth on mirror-polish silicon wafer pretreated by silicon ion implantation
Conference
·
OSTI ID:230068
- Institute of Physics, Beijing (China); and others
Diamond films have been obtained by hot-filament chemical vapor deposition (HF-CVD) method on silicon wafer. The substrates were pre-implantated by silicon ion beam (the ion energy is 25keV, implantation dosage is 5x10{sup 15}, 5x10{sup 16} and 2x10{sup 17}Si{sup +}/cm{sup 2}). X-ray diffraction (XRD), scanning electron microscopy (SEM), Cross-sectional transmission electron microscopy (TEM), and Raman spectroscopy were used to characterize the structure of the synthesized films.
- OSTI ID:
- 230068
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
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