Effect of ion implantation on the CVD diamond nucleation density on Si substrates
- Instituto de Fisica da UFRGS, Porto Alegre (Brazil); and others
Si(100) substrates, scratched with diamond paste (4{mu}m), were implanted in one half of their surface, with {sup 40}Ar{sup +} (60 keV) and {sup 84}Kr{sup +} (60, 100 and 300 keV) ions with fluences ranging from 5x10{sup 13} to 10{sup 15} ions/cm{sup 2}. These samples were placed in a hot filament chemical vapor deposition (HFCVD) equipment and after deposition the diamond nucleation density was analyzed. The nucleation density remained the same as the one for the non implanted area, until a certain critical ion fluence, beyond which decreases rapidly more than three orders of magnitude. This critical fluence depends on the ion mass, energy and on the substrate temperature during the ion implantation. The nucleation density data as a function of ion fluence correlates well with RBS/channeling measurements results that show the amorphisation of the samples at the previously mentioned critical fluences. The results indicate that the atomic motions during the ion induced amorphisation process destroy the small features in the sample surface topography that are responsible for the CVD diamond nucleation.
- OSTI ID:
- 230069
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
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