Achieving high nucleation density of diamond film under low pressures in hot-filament chemical vapor deposition
Conference
·
OSTI ID:82566
- Chinese Academy of Sciences, Beijing (China). Inst. of Physics
- Chinese Academy of Engineering Physics, Sichuan (China)
Diamonds have been deposited rapidly under low pressures (< 0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 10{sup 9}-10{sup 11}/cm{sup 2}. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy (SEM) were used to analyze the obtained films. These results breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond films can be easily nucleated on unscratched substrate via Hot Filament CVD.
- OSTI ID:
- 82566
- Report Number(s):
- CONF-941144--; ISBN 1-55899-264-2
- Country of Publication:
- United States
- Language:
- English
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