Orientation Dependence of Linewidth Variation in sub-50-nm Gaussian e-beam Lithography and its Correction

Journal Article · Sat Dec 31 23:00:00 EST 2005 · Journal of Vacuum Sci. and Tech. B: Microelect. and Nanometer Structure

DOI:https://doi.org/10.1116/1.2393292· OSTI ID:930582

Lu, M; Tennant, D; Jacobsen, C

The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub-50-nm scale in Gaussian e-beam lithography. The authors analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930582
• Report Number(s): BNL--80794-2008-JA
• Journal Information: Journal of Vacuum Sci. and Tech. B: Microelect. and Nanometer Structure, Journal Name: Journal of Vacuum Sci. and Tech. B: Microelect. and Nanometer Structure Journal Issue: 6 Vol. 24; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
CARTESIAN COORDINATES
CORRECTIONS
DIFFRACTION
ELECTRON BEAMS
LINE WIDTHS
ORIENTATION
national synchrotron light source