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U.S. Department of Energy
Office of Scientific and Technical Information

Static contrast enhancement layer lithography

Conference ·
OSTI ID:6474108
The linewidths of structures patterned for microelectronic fabrication continue to decrease; 0.8 ..mu..m lines and spaces are now imaged in commercial production and much smaller features are predicted for the near future. These feature sizes have dropped significantly below the previously predicted limit of optical lithography (ca. 1.25 ..mu..m). This is due principally to a very large worldwide research effort in improved optical patterning techniques. One of the more significant developments in optical patterning has been the advent of contrast enhancement layer lithography (CEL).
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6474108
Report Number(s):
SAND-88-2951C; CONF-890401-2; ON: DE89003131
Country of Publication:
United States
Language:
English