Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographies
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:6133596
- AT T Bell Labs., Holmdel, NJ (United States)
The authors report on resolution experiments with the negative chemically amplified resist AZ PN114. Using soft-x-ray projection lithography at [lambda] = 14 nm, 0.1-[mu]m lines and spaces were imaged in film thicknesses ranging from 50 to 200 nm with both a 20 X reduction Schwarzschild camera and a 1 X Offner ring-field optical system at doses of [approximately]10 mJ/cm[sup 2]. High-resolution electron-beam lithography was used to study the effect of postexposure bake temperature on resist resolution and to characterize a trilayer structure. It was found that at temperatures higher than 105[degrees]C 0.1-[mu]m features could not be resolved and patterns were distorted. Using e-beam, 0.075-[mu]m lines and spaces were resolved in AZ PN114 and transferred the pattern to the underlying levels of the trilayer. The feature edge-noise was measured for 0.1- and 0.2-[mu]m critical dimensions (CDs) over a wide range of doses. The authors compared the edge noise and linewidth variation with those measured on samples written in poly (methyl methacrylate) (PMMA). 3[sigma] values of 24 nm were found for AZ PN 114 and 9 nm for PMMA. These results suggest that AZ PN 114, or a resist of similar sensitivity, may be useful for CDs as small as 0.25 [mu]m. To maintain sufficient linewidth control at smaller CDs in manufacturing, less sensitive resists will probably be required. 23 refs., 6 figs., 1 tab.
- OSTI ID:
- 6133596
- Report Number(s):
- CONF-920575--
- Conference Information:
- Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 10:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
COATINGS
ELECTROMAGNETIC RADIATION
ELECTRON BEAM MACHINING
ELECTRONIC CIRCUITS
ESTERS
IMAGES
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MACHINING
MASKING
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
NOISE
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PMMA
POLYACRYLATES
POLYMERS
POLYVINYLS
RADIATIONS
RESOLUTION
SENSITIVITY
SURFACE FINISHING
TEMPERATURE DEPENDENCE
X RADIATION
360602* -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
COATINGS
ELECTROMAGNETIC RADIATION
ELECTRON BEAM MACHINING
ELECTRONIC CIRCUITS
ESTERS
IMAGES
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MACHINING
MASKING
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
NOISE
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PMMA
POLYACRYLATES
POLYMERS
POLYVINYLS
RADIATIONS
RESOLUTION
SENSITIVITY
SURFACE FINISHING
TEMPERATURE DEPENDENCE
X RADIATION