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Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographies

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:6133596
The authors report on resolution experiments with the negative chemically amplified resist AZ PN114. Using soft-x-ray projection lithography at [lambda] = 14 nm, 0.1-[mu]m lines and spaces were imaged in film thicknesses ranging from 50 to 200 nm with both a 20 X reduction Schwarzschild camera and a 1 X Offner ring-field optical system at doses of [approximately]10 mJ/cm[sup 2]. High-resolution electron-beam lithography was used to study the effect of postexposure bake temperature on resist resolution and to characterize a trilayer structure. It was found that at temperatures higher than 105[degrees]C 0.1-[mu]m features could not be resolved and patterns were distorted. Using e-beam, 0.075-[mu]m lines and spaces were resolved in AZ PN114 and transferred the pattern to the underlying levels of the trilayer. The feature edge-noise was measured for 0.1- and 0.2-[mu]m critical dimensions (CDs) over a wide range of doses. The authors compared the edge noise and linewidth variation with those measured on samples written in poly (methyl methacrylate) (PMMA). 3[sigma] values of 24 nm were found for AZ PN 114 and 9 nm for PMMA. These results suggest that AZ PN 114, or a resist of similar sensitivity, may be useful for CDs as small as 0.25 [mu]m. To maintain sufficient linewidth control at smaller CDs in manufacturing, less sensitive resists will probably be required. 23 refs., 6 figs., 1 tab.
OSTI ID:
6133596
Report Number(s):
CONF-920575--
Conference Information:
Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 10:6
Country of Publication:
United States
Language:
English