Optimization of X-ray sources from a high-average-power ND:Glass laser-produced plasma for proximity lithography
- and others
The concept of a laser-based proximity lithography system for electronic microcircuit production has advanced to the point where a detailed design of a prototype system capable of exposing wafers at 40 wafer levels per hr is technically feasible with high-average-power laser technology. In proximity x-ray lithography, a photoresist composed of polymethyl- methacrylate (PMMA) or similar material is exposed to x rays transmitted through a mask placed near the photoresist, a procedure which is similar to making a photographic contact print. The mask contains a pattern of opaque metal features, with line widths as small as 0.12 {mu}m, placed on a thin (1-{mu}m thick) Si membrane. During the exposure, the shadow of the mask projected onto the resist produces in the physical and chemical properties of the resist a pattern of variation with the same size and shape as the features contained in the metal mask. This pattern can be further processed to produce microscopic structures in the Si substrate. The main application envisioned for this technology is the production of electronic microcircuits with spatial features significantly smaller than currently achievable with conventional optical lithographic techniques (0.12 {micro}m vs 0.25 {micro}m). This article describes work on optimizing a laser-produced plasma x-ray source intended for microcircuit production by proximity lithography.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- OSTI ID:
- 376951
- Report Number(s):
- UCRL-LR--105820-95; ON: DE96013181
- Country of Publication:
- United States
- Language:
- English
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