Method for extreme ultraviolet lithography
A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20013907
- Resource Relation:
- Other Information: PBD: 28 Dec 1999
- Country of Publication:
- United States
- Language:
- English
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Photoresist composition for extreme ultraviolet lithography
Method for extreme ultraviolet lithography