Photoresist composition for extreme ultraviolet lithography

Patent · Thu Dec 31 23:00:00 EST 1998

OSTI ID:872688

Felter, T E ^[1]; Kubiak, G D ^[1]

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1. Alameda County, CA

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Livermore, CA)
• Patent Number(s): US 5989776
• OSTI ID: 872688
• Country of Publication: United States
• Language: English

Related Subjects

/430/
05
13
4-0
apertures
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array
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boron
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characteristic
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conventional process
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mask
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mirrors
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nm
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particular
pattern
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photoresist
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plasma
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produce
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projection
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radiation
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series
single
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vaporize
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