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Method for extreme ultraviolet lithography

Patent ·
OSTI ID:873452
 [1];  [2]
  1. 727 Clara St., Livermore, Alameda County, CA 94550
  2. 475 Maple St., Livermore, Alameda County, CA 94550
+ Show Author Affiliations

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550);Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)
Patent Number(s):
US 6162577
OSTI ID:
873452
Country of Publication:
United States
Language:
English

References (3)

Soft x-ray resist characterization: studies with a laser plasma x-ray source conference May 1990
Fabrication of 0.4 μm grid apertures for field-emission array cathodes journal April 1993
XUV resist characterization: studies with a laser plasma source conference February 1991

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/430/
05
13
4-0
apertures
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appropriate
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bears
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characteristic wavelength
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conventional
conventional process
conventional processing
demagnified
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euv
euv radiation
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extreme
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gate
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mask
mask pattern
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mirrors
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photoresists
photoresists designed
plasma
printed
processing
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produce
produces
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projection
projection lithography
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satisfy
satisfy conventional
series
single
single exposure
size
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substrate
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