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Wavelength dependence of the resist sidewall angle in extreme ultraviolet lithography

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
DOI:https://doi.org/10.1116/1.587451· OSTI ID:7094682
; ; ; ;  [1]; ;  [2]; ; ; ;  [3]; ; ;  [4]
  1. AT T Bell Laboratories, Holmdel, New Jersey 07733-3030 (United States)
  2. AT T Bell Laboratories, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. AT T Bell Laboratories, Murray Hill, New Jersey 07974-0636 (United States)
  4. Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We report experimental and theoretical studies of the resist sidewall angles produced using extreme ultraviolet lithography at exposure wavelengths of 37.5, 13.9, and 6.8 nm. We show that high resist absorption in this wavelength region leads to a significant degradation in pattern sidewall angle. Because steep resist profiles are needed in semiconductor manufacturing to ensure adequate linewidth control it seems unlikely that a single-layer resist process can be used in extreme ultraviolet lithography except at the shortest wavelength.

OSTI ID:
7094682
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:6; ISSN JVTBD9; ISSN 0734-211X
Country of Publication:
United States
Language:
English

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