At-wavelength detection of extreme ultraviolet lithography mask blank defects

Journal Article · Sat Oct 31 23:00:00 EST 1998 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590473· OSTI ID:300104

Jeong, S; Idir, M ^[1]; Lin, Y ^[2]; Johnson, L; Rekawa, S; Jones, M; Denham, P; Batson, P ^[1]; Levesque, R; Kearney, P ^[3]; Yan, P ^[4]; Gullikson, E; Underwood, J H; Bokor, J ^[1]

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1. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. EECS Department, University of California, Berkeley, California 94720 (United States)
3. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
4. Intel Corporation, Santa Clara, California 95052 (United States)

We report the design and operation of an at-wavelength system for extreme ultraviolet lithography mask blank defect detection. Initial results demonstrate sensitivity to submicron size phase defects. The performance of the system is compared with the practical requirements for a mask blank inspection system in terms of the sensitivity and scanning time. {copyright} {ital 1998 American Vacuum Society.}

• OSTI ID: 300104
• Report Number(s): CONF-9805132--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 16; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DEFECTS
DESIGN
EXTREME ULTRAVIOLET SPECTRA
INSPECTION
MASKING
MICROELECTRONICS
OPTICAL SYSTEMS
PERFORMANCE
RESPIRATORS