At-wavelength detection of extreme ultraviolet lithography mask blank defects

Journal Article · Sun Nov 01 00:00:00 EST 1998 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590473· OSTI ID:300104

Jeong, S; Idir, M ^[1]; Lin, Y ^[2]; Johnson, L; Rekawa, S; Jones, M; Denham, P; Batson, P ^[1]; Levesque, R; Kearney, P ^[3]; Yan, P ^[4]; Gullikson, E; Underwood, J H; Bokor, J ^[1]

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1. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. EECS Department, University of California, Berkeley, California 94720 (United States)
3. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
4. Intel Corporation, Santa Clara, California 95052 (United States)

We report the design and operation of an at-wavelength system for extreme ultraviolet lithography mask blank defect detection. Initial results demonstrate sensitivity to submicron size phase defects. The performance of the system is compared with the practical requirements for a mask blank inspection system in terms of the sensitivity and scanning time. {copyright} {ital 1998 American Vacuum Society.}

• OSTI ID: 300104
• Report Number(s): CONF-9805132-; ISSN 0734-211X; TRN: 9825M0029
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 16, Issue 6; Conference: 42. international conference on electron, ion, and photon beam technology and nanofabrication, Chicago, IL (United States), 26-29 May 1998; Other Information: PBD: Nov 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
INSPECTION
RESPIRATORS
EXTREME ULTRAVIOLET SPECTRA
MASKING
DEFECTS
DESIGN
MICROELECTRONICS
PERFORMANCE
OPTICAL SYSTEMS