Undulator radiation for at-wavelength interferometry of optics for extreme-ultraviolet lithography

Journal Article · Tue Nov 30 23:00:00 EST 1993 · Applied Optics; (United States)

OSTI ID:5340786

Sommargren, G; Ceglio, N ^[1]; Attwood, D; Beguiristain, R; Nguyen, K; Bokor, J; Jackson, K; Koike, M; Underwood, J ^[2]

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1. Advanced X-Ray Optics Group, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
2. Center for X-Ray Optics, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Techniques are described for at-wavelength interferometry of multilayer coated optics designed for use in extreme-ultraviolet lithography. Broadly tunable undulator radiation, which covers the spectral region from 45 to 400 A, is described. The coherent power available at these wavelengths is described, and several types of interferometer that might be suitable at these short wavelengths are also described.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 5340786
• Journal Information: Applied Optics; (United States), Journal Name: Applied Optics; (United States) Vol. 32:34; ISSN APOPAI; ISSN 0003-6935
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARGON IONS
BEAMS
CHARGED PARTICLES
COATINGS
ELECTROMAGNETIC RADIATION
ETCHING
ION BEAMS
IONIZING RADIATIONS
IONS
RADIATIONS
REFLECTIVE COATINGS
REPAIR
SILICON IONS
SOFT X RADIATION
SURFACE FINISHING
X RADIATION