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At-wavelength metrology of 13 nm lithography imaging optics

Journal Article · · Review of Scientific Instruments; (United States)
DOI:https://doi.org/10.1063/1.1145718· OSTI ID:6594369
; ;  [1]; ; ; ; ; ; ;  [2];  [3]; ;  [4]; ;  [5]
  1. AT T Bell Laboratories, 510E Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. AT T Bell Laboratories, 101 Crawfords Corner Road, Holmdel, New Jersey 07733 (United States)
  3. State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)
  4. Sandia National Laboratories, M. S. 9161, 7011 East Avenue, Livermore, California 94550 (United States)
  5. University of Wisconsin-Madison, Wisconsin 53706 (United States)

The development of an extreme ultraviolet (EUV) interferometer for testing EUV lithography optics operating at a wavelength of 13 nm using the U13U undulator beam line at the National Synchrotron Light Source is presented. The design and implementation of phase-measuring, lateral-shearing interferometry and a knife edge test will be described.

OSTI ID:
6594369
Journal Information:
Review of Scientific Instruments; (United States), Journal Name: Review of Scientific Instruments; (United States) Vol. 66:2; ISSN 0034-6748; ISSN RSINAK
Country of Publication:
United States
Language:
English