Use of attenuated phase masks in extreme ultraviolet lithography

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589664· OSTI ID:550468

Wood, II, O R; White, D L ^[1]; Bjorkholm, J E; Fetter, L E; Tennant, D M ^[2]; MacDowell, A A; LaFontaine, B ^[3]; Kubiak, G D ^[4]

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1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
2. Bell Laboratories, Lucent Technologies, Holmdel, New Jersey 07733 (United States)
3. Bell Laboratories, Lucent Technologies, Brookhaven National Laboratory, Upton, New York 11973 (United States)
4. Sandia National Laboratories/California, Livermore, California 94551 (United States)

We have used an attenuated phase mask, a mask with a {pi}-phase shifting attenuator, in extreme ultraviolet lithography at 13.9 nm wavelength to produce resist profiles with sharper, more vertical sidewalls. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 550468
• Report Number(s): CONF-9705218--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 15; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
EXTREME ULTRAVIOLET RADIATION
INTEGRATED CIRCUITS
MASKING
PHASE SHIFT
SYNCHROTRON RADIATION
X-RAY EQUIPMENT