Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on {ital p}-type CdTe(100) single crystals at 200 {degree}C. {ital In} {ital situ} photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4{ital d}, Zn 3{ital d}, and Te 4{ital d} core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is {Delta}{ital E}{sub {ital v}}=0.20 eV. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 91888
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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