Photoemission study of CdS heterojunction formation with binary selenide semiconductors

Journal Article · Wed Nov 01 04:00:00 EST 1995 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.359629· OSTI ID:124240

Nelson, A J ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu{sub 2{minus}{ital x}}Se and CdS/In{sub 6}Se{sub 7} heterojunction interfaces. Cu{sub 2{minus}{ital x}}Se and In{sub 6}Se{sub 7} layers were deposited on GaAs (100) by physical vapor deposition from Cu{sub 2}Se and In{sub 2}Se{sub 3} sources. CdS overlayers were then deposited {ital in} {ital situ}, at room temperature, in steps on these layers. Photoemission measurements were acquired after each growth to observe changes in the valence-band electronic structure and changes in the In4{ital d} and Cd4{ital d} core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu{sub 2{minus}{ital x}}Se and CdS/In{sub 6}Se{sub 7} heterojunction valence-band discontinuities and the consequent heterojunction band diagrams. These results are compared to the valence-band offset ({Delta}{ital E}{sub {ital v}}) for the CdS/CuInSe{sub 2} heterojunction interface.

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 124240
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM SELENIDES
COPPER SELENIDES
ELECTRONIC STRUCTURE
HETEROJUNCTIONS
INDIUM SELENIDES
INTERFACES
MATERIALS
PHOTOEMISSION
PHOTOVOLTAIC CELLS
SOFT X RADIATION
SYNCHROTRON RADIATION