Band alignment at the CdS/Cu{sub 2}In{sub 4}Se{sub 7} heterojunction interface
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)
Band offsets at the CdS/Cu{sub 2}In{sub 4}Se{sub 7} heterojunction interface were studied by synchrotron radiation soft x-ray photoemission spectroscopy. CdS overlayers were sequentially grown in steps, at room temperature, on the Cu{sub 2}In{sub 4}Se{sub 7} crystal. Photoemission measurements were acquired after each growth to determine the electronic structure at the heterojunction interface. Results of these measurements indicate that the valence-band offset {Delta}{ital E}{sub vbm} is 1.10({plus_minus}0.20) eV and that the conduction-band offset {Delta}{ital E}{sub cbm} is 0.22({plus_minus}0.20) eV for the CdS/Cu{sub 2}In{sub 4}Se{sub 7} heterojunction. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 124279
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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