Soft x-ray photoemission investigation on the effect of In doping in CdS/CuInSe sub 2 heterojunction formation

Journal Article · Mon Dec 14 23:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.351895· OSTI ID:7048652

Nelson, A J; Niles, D W ^[1]; Rioux, D; Patel, R; Hoechst, H ^[2]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
2. Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589 (United States)

Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS(In)/CuInSe{sub 2} heterojunction interface. In-doped CdS overlayers were deposited in steps on single-crystal {ital n}-type CuInSe{sub 2} at 250 {degree}C. Results indicate that the CdS(In) grows in registry with the substrate, initially in a two-dimensional growth mode followed by three-dimensional island growth as is corroborated by reflection high-energy electron diffraction analysis. Photoemission measurements were acquired after each growth in order to observe changes in the valence-band electronic structure. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the CdS(In)/CuInSe{sub 2} heterojunction valence-band discontinuity and the consequent heterojunction band diagram as a function of In dopant concentration. We measured a valence-band offset {Delta}{ital E}{sub {ital v}}=0.3 eV, independent of In doping.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7048652
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:12; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
BREMSSTRAHLUNG
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
INORGANIC PHOSPHORS
JUNCTIONS
MATERIALS
PHOSPHORS
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SULFIDES
SULFUR COMPOUNDS
SYNCHROTRON RADIATION
TRANSITION ELEMENT COMPOUNDS