Synchrotron-radiation photoemission study of CdS/CuInSe sub 2 heterojunction formation

Journal Article · Mon Oct 15 00:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.42.7518· OSTI ID:6288284

Nelson, A J; Gebhard, S ^[1]; Rockett, A ^[2]; Colavita, E ^[3]; Engelhardt, M; Hoechst, H ^[4]

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1. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO (USA)
2. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL (USA)
3. Department of Physics, University of Calabria, I-87036 Arcavacata di Rende, Cosenza (Italy)
4. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, WI (USA)

Synchrotron-radiation soft-x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/CuInSe{sub 2} heterojunction interface. CdS overlayers were deposited in steps on single-crystal {ital p}- and {ital n}-type CuInSe{sub 2} at 250 {degree}C. Results indicate that the CdS grows in registry with the substrate, initially in a two-dimensional growth mode followed by three-dimensional island growth as is corroborated by reflection high-energy electron-diffraction analysis. Photoemission measurements were acquired after each growth in order to observe changes in the valence-band electronic structure as well as changes in the In 4{ital d}, Se 3{ital d}, Cd 4{ital d}, and S 2{ital p} core lines. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the CdS/CuInSe{sub 2} heterojunction valence-band discontinuity and the consequent heterojunction band diagram. These results show that the Katnani-Margaritondo method is unreliable in determining offsets for heterojunctions where significant Fermi-level pinning may occur and where the local structure and chemistry of the interface depends strongly on the specific heterojunction.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6288284
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:12; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
BREMSSTRAHLUNG
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
INORGANIC PHOSPHORS
INTERFACES
JUNCTIONS
PHOSPHORS
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SULFIDES
SULFUR COMPOUNDS
SYNCHROTRON RADIATION
TRANSITION ELEMENT COMPOUNDS