Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

The effect of In doping in CdS/CuInSe[sub 2] heterojunction formation: A photoemission investigation

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:7050800
;  [1]; ; ;  [2]
  1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, 3731 Schneider Drive, Stoughton, Wicsonsin 53589 (United States)
Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS(In)/CuInSe[sub 2] heterojunction interface. In-doped CdS overlayers were deposited in steps on single-crystal [ital n]-type CuInSe[sub 2] at 250 [degree]C. Results indicate that the CdS(In) grows in registry with the substrate, initially in a two dimensional growth mode followed by three dimensional island growth as is corroborated by RHEED analysis. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In4d, Se3d, Cd4d, and S2p core lines. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the CdS(In)/CuInSe[sub 2] heterojunction valence band discontinuity and the consequent heterojunction band diagram as a function of In dopant concentration. We measured a valence band offset [Delta]E[sub v]=0.3 eV, independent of In doping.
OSTI ID:
7050800
Report Number(s):
CONF-9205115--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 268:1
Country of Publication:
United States
Language:
English