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Theoretical and experimental studies of the ZnSe/CuInSe[sub 2] heterojunction band offset

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.109295· OSTI ID:6484961
; ; ;  [1]; ; ;  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)
We report first-principles band structure calculations that show that ZnSe/CuInSe[sub 2] has a significant valence band offset (VBO, [Delta][ital E][sub [ital v]]): 0.70[plus minus]0.05 eV for the relaxed interface and 0.60[plus minus]0.05 eV for the coherent interface. These large values demonstrate the failure of the common anion rule. This is traced to a stronger Cu,[ital d]-Se,[ital p] level repulsion in CuInSe[sub 2] than the Zn,[ital d]-Se,[ital p] repulsion in ZnSe. The VBO was then studied by synchrotron radiation soft x-ray photoemission spectroscopy. ZnSe overlayers were sequentially grown in steps on [ital n]-type CuInSe[sub 2](112) single crystals at 200 [degree]C. [ital In] [ital situ] photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In 4[ital d] and Zn 3[ital d] core lines. Results of these measurements reveal that the VBO is [Delta][ital E][sub [ital v]]=0.70[plus minus]0.15 eV, in good agreement with the first-principles prediction.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6484961
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:20; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English