Band offsets at the CdS/CuInSe[sub 2] heterojunction

Journal Article · Mon Nov 01 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110429· OSTI ID:6094794

Wei, S; Zunger, A ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

The traditional explanation for the successful electron-hole separation in CdS/CuInSe[sub 2] solar cells rests on the assumption of a type-II band lineup: The conduction-band minimum is assumed to be on the CdS window while the valence-band maximum is assumed to be localized on the CuInSe[sub 2] absorber. This picture of negative conduction-band offset [Delta][ital E][sub [ital c]][lt]0 was supported by the electron affinity rule, but was sharply contradicted by the more recent photoemission experiments of Nelson [ital et] [ital al]. for CdS/CuInSe[sub 2] yielding [Delta][ital E][sub [ital c]]=+1.08 eV. Our first principles calculations yield for CdS/CuInSe[sub 2] [Delta][ital E][sub [ital c]]=+0.31 eV, hence, a type-I band alignment. We challenge the published experimental value as being in error and point to the need of revising current solar cell device models that assume [Delta][ital E][sub [ital c]][lt]0.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6094794
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:18; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM SULFIDE SOLAR CELLS
COPPER SELENIDE SOLAR CELLS
DIRECT ENERGY CONVERTERS
ELECTRONIC STRUCTURE
EQUIPMENT
HETEROJUNCTIONS
INDIUM SELENIDE SOLAR CELLS
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
TRANSPORT THEORY