Photoemission investigation of the electronic structure at polycrystalline CuInSe[sub 2] thin-film interfaces

Journal Article · Sun Oct 31 23:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.354195· OSTI ID:6145447

Nelson, A J; Swartzlander, A B; Tuttle, J R; Noufi, R ^[1]; Patel, R; Hoechst, H ^[2]

---

1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
2. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)

The surface versus bulk composition and electronic structure of polycrystalline CuInSe[sub 2] thin-film interfaces were studied by synchrotron radiation soft-x-ray photoemission spectroscopy. An [ital n]-type In[sub 2]Se[sub 3]/CuIn[sub 3]Se[sub 5] surface layer forms on enhanced-grain polycrystalline thin-film [ital p]-type CuInSe[sub 2] during fabrication. Enhanced-grain CuInSe[sub 2] films were sputter etched (500 V Ar) and analyzed [ital in] [ital situ] to determine core-level binding energies and Fermi-level positions for the [ital n]-type surface and the [ital p]-type CuInSe[sub 2] bulk within [plus minus]0.1 eV. The transition between the [ital n]-type surface and the [ital p]-type bulk was experimentally observed by noting the change in the position of the valence-band maximum relative to the Fermi level [ital E][sub [ital F]]. From these measurements, the valence-band offset [Delta][ital E][sub [ital v]] between the layers was determined to be 0.50 eV. Measurement of the work functions [phi] was also completed and reveals [phi]=4.75 eV for the In[sub 2]Se[sub 3] (CuIn[sub 3]Se[sub 5]) surface layer and [phi]=4.04 eV for the bulk CuInSe[sub 2]. Combining these results allows construction of a surface band diagram for this device configuration as well as determination of the relationship between composition, electronic structure, and device performance.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6145447
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:9; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
BREMSSTRAHLUNG
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTALS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION
FILMS
INDIUM COMPOUNDS
INDIUM SELENIDES
INTERFACES
IONIZING RADIATIONS
PHOTOEMISSION
POLYCRYSTALS
RADIATIONS
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SPUTTERING
SYNCHROTRON RADIATION
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X RADIATION