Growth of CuIn{sub 3}Se{sub 5} layer on the CuInSe{sub 2} film and its effect on the photovoltaic properties of In{sub 2}Se{sub 3}/CuInSe{sub 2} solar cells

Conference · Tue Dec 30 23:00:00 EST 1997

OSTI ID:302514

Kwon, S H; Park, S C; Ahn, B T ^[1]; Yoon, K H; Song, J ^[2]

---

1. Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of). Dept. of Materials Science and Engineering
2. Korea Inst. of Energy Research, Taejon (Korea, Republic of). New Energy Dept.

The growth of CuIn{sub 3}Se{sub 5} layer on CuInSe{sub 2} films has been studied for the fabrication of CuInSe{sub 2} solar cell, using the three-stage process. After growing the CuInSe{sub 2} film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn{sub 3}Se{sub 5}). AES depth analysis indicated the presence of a CuIn{sub 3}Se{sub 5} layer on the CuInSe{sub 2} surface. Because the lattice parameters of CuIn{sub 3}Se{sub 5} are smaller, the XRD peaks were shifted to higher 2{theta} values. In{sub 2}Se{sub 3}/CuInSe{sub 2} cells with a thin CuIn{sub 3}Se{sub 5} layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm{sup 2}. The device fabricated from the films with a thick CuIn{sub 3}Se{sub 5} layer on CuInSe{sub 2} film displayed a double diode effect which possibly caused the increase of junction interface.

• OSTI ID: 302514
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
CRYSTAL GROWTH
ENERGY EFFICIENCY
ENERGY GAP
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
OPTICAL PROPERTIES
PERFORMANCE
PHASE STUDIES