Heteroepitaxy of CuIn{sub x}Se{sub y} on Si and PbSe/CaF{sub 2}/Si substrates

Conference · Fri Dec 30 23:00:00 EST 1994

OSTI ID:208053

Blunier, S; Tiwari, A N; Kessler, K; Zogg, H ^[1]; Doebeli, M; Filzmoser, M ^[2]

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1. Swiss Federal Inst. of Tech., Zuerich (Switzerland). Arbeitsgemeinschaft fuer Industrielle Forschung
2. ETH-Hoenggerberg, Zuerich (Switzerland)

Heteroepitaxial CuInSe{sub 2}, CuIn{sub 2}Se{sub 3.5} and CuIn{sub 3}Se{sub 5} (CuIn{sub x}Se{sub y}) layers have been directly grown on Si(111) substrates by molecular beam epitaxy. Reflection high energy electron diffraction was used to study the growth kinetics. (112)-oriented epitaxial layers free from impurity phases have been obtained. The positions of (448) X-ray diffraction peaks and vibrational mode frequencies of Raman spectra are used to identify different CuIn{sub x}Se{sub y} phases. Rutherford backscattered ion channeling minimum yields of about 12% and 20% have been measured for about 0.5 {micro}m thick CuInSe{sub 2} and CuIn{sub 3}Se{sub 5} layers, respectively.

• OSTI ID: 208053
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
BACKSCATTERING
CALCIUM FLUORIDES
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
ENERGY BEAM DEPOSITION FILMS
FABRICATION
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
PHASE STUDIES
RAMAN SPECTROSCOPY
RUTHERFORD SCATTERING
SCANNING ELECTRON MICROSCOPY
SILICON
SPECTRA