Heteroepitaxy of CuInS{sub 2} on Si(111)
- Hahn-Meitner-Institut, Department of Physical Chemistry, Glienicker Str. 100, D-14109 Berlin (Germany)
Epitaxial layers of CuInS{sub 2} are grown on chemically hydrogen terminated Si(111) surfaces with 4{degree} miscut by molecular beam epitaxy. The morphological and structural properties are determined by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and texture analysis. The data show growth in the {l_angle}112{r_angle} direction and substantial twinning of the 75-nm-thick films. High-resolution cross-sectional micrographs of the interface indicate semicoherent epitaxial growth via an interfacial indium-rich secondary phase. The pronounced faceting of the film surface is discussed in relation to twin lamellae. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 389238
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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