Growth of CuInS{sub 2} films on crystalline substrates

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:417690

Hunger, R; Scheer, R; Alt, M; Lewerenz, H J ^[1]

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1. Hahn-Meitner-Inst., Berlin (Germany). Dept. of Physical Chemistry

CuInS{sub 2} films were grown by molecular beam epitaxy (MBE) on hydrogen terminated Si(111) substrates with 4{degree} miscut. X-ray diffraction (XRD) texture analysis reveals that CuInS{sub 2} was grown heteroepitaxially with the epitaxial relationships CuInS{sub 2}(112){parallel}Si(111) and CuInS{sub 2} [11{bar 1}]{parallel}Si<11{bar 2}>. Moreover, a substantial amount of rotational twins is observed. The crystalline order is maintained across the interface as observed by cross-sectional transmission electron microscopy (CTEM). XRD and scanning electron microscopy (SEM) investigations show that nonstoichiometric preparation greatly influences the growth morphology and leads to the formation of secondary phases.

• OSTI ID: 417690
• Report Number(s): CONF-960401--; ISBN 1-55899-329-0
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COPPER SULFIDES
CRACKS
EXPERIMENTAL DATA
INDIUM SULFIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
ROUGHNESS
RUTHERFORD SCATTERING
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY
TWINNING
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY