Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area
Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nmto30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 914254
- Report Number(s):
- BNL--78822-2007-JA
- Journal Information:
- Opt. Lett., Journal Name: Opt. Lett. Vol. 31; ISSN OPLEDP; ISSN 0146-9592
- Country of Publication:
- United States
- Language:
- English
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