Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

Journal Article · Mon Apr 04 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3576914· OSTI ID:21518366

Malinowski, Pawel E; Mertens, Robert; Van Hoof, Chris ^[1]; Duboz, Jean-Yves; Semond, Fabrice; Frayssinet, Eric ^[2]; De Moor, Piet; Minoglou, Kyriaki; John, Joachim; Horcajo, Sara Martin ^[1]; Verhoeve, Peter ^[3]; Esposito, Marco ^[3]; Giordanengo, Boris; BenMoussa, Ali ^[4]

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1. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
2. CNRS/CRHEA, rue Bernard Gregory, F-06560 Valbonne (France)
3. ESA/ESTEC, Keplerlaan 1, 2200 AG Noordwijk (Netherlands)
4. Royal Observatory of Belgium, Ringlaan 3, B-1180 Brussels (Belgium)

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.

• OSTI ID: 21518366
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH METHODS
DETECTION
DOPED MATERIALS
ELECTRODES
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
EPITAXY
EXTREME ULTRAVIOLET RADIATION
FLUIDS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
GASES
HELIUM
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHOTODIODES
PNICTIDES
RADIATIONS
RARE GASES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SENSITIVITY
SILICON
ULTRAVIOLET RADIATION
WAVELENGTHS