Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

Journal Article · Tue Sep 15 04:00:00 EDT 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3212666· OSTI ID:22051031

Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus ^[1]; John, Joachim; Malinowski, Pawel E ^[2]

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1. Laser-Laboratorium-Goettingen e.V., Hans-Adolf-Krebs-Weg 1, D-37077 Goettingen (Germany)
2. Interuniversity MicroElectronic Center (IMEC), Kapeldreef 75, B-3001 Leuven (Belgium)

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

• OSTI ID: 22051031
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 9 Vol. 80; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CHEMICAL VAPOR DEPOSITION
ELECTRODES
EXTREME ULTRAVIOLET RADIATION
GALLIUM NITRIDES
ORGANOMETALLIC COMPOUNDS
PHOTODETECTORS
PHOTODIODES
PHOTONS
PLASMA PRODUCTION
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SILICON
XENON