Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures
Conference
·
OSTI ID:20104596
Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of {approximately}2x10{sup 19} atoms/cm{sup 3} in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-{micro}S compared to a sheet conductance of 20-{micro}S for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.
- Research Organization:
- North Carolina State Univ., Raleigh, NC (US)
- OSTI ID:
- 20104596
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates
Magneto-optic studies of GaN films and GaN/AlGaN heterostructures
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Conference
·
Thu Oct 31 23:00:00 EST 1996
·
OSTI ID:395000
Magneto-optic studies of GaN films and GaN/AlGaN heterostructures
Book
·
Thu Oct 31 23:00:00 EST 1996
·
OSTI ID:395022
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Journal Article
·
Mon Apr 21 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22273546