Magneto-optic studies of GaN films and GaN/AlGaN heterostructures
- Florida State Univ., Tallahassee, FL (United States)
- Naval Research Lab., Washington, DC (United States)
- Meijo Univ., Nagoyo (Japan). Dept. of Electrical and Electronic Engineering
Magneto-studies have been carried out for several MOCVD grown GaN thin films and GaN/AlGaN heterostructures at magnetic fields up to 30 T and at temperatures between 4.2 K to 100 K. Electron cyclotron resonance was observed in two heterostructures with high mobilities ({micro} > 2,000 cm{sup 2}/V {center_dot} s), the effective mass obtained form the cyclotron resonance measurement is 0.23 {+-} 0.01 m{sub 0}, where m{sub 0} is the mass of free electron. For Si-doped thin film GaN there was no sign of electron cyclotron resonance even when samples were heated up to 100 K. However, a 1s to 2p+ absorption line was observed for Si-doped GaN samples. A binding energy of 29 meV and low frequency dielectric constant of 10.4 is obtained.
- OSTI ID:
- 395022
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ABSORPTION
ALUMINIUM NITRIDES
BINDING ENERGY
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRON CYCLOTRON-RESONANCE
EXPERIMENTAL DATA
GALLIUM NITRIDES
LIGHT EMITTING DIODES
MAGNETIC FIELDS
MAGNETO-OPTICAL EFFECTS
SEMICONDUCTOR MATERIALS
SILICON