Persistent photoconductivity in p-type GaN epilayers and n-type AlGaN/GaN heterostructures
Book
·
OSTI ID:581099
- Kansas State Univ., Manhattan, KS (United States). Dept. of Physics
- APA Optics Inc., Blaine, MN (United States)
- Univ. of Illinois, Urbana, IL (United States)
Persistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 581099
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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