Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
Fluorine plasma treatment technique can effectively incorporate fluorine atoms into the AlGaN barrier, depleting the two-dimensional electron gases (2DEGs) in the channel of AlGaN/GaN high electron mobility transistors and converting the device from depletion mode to enhancement mode. To reveal the underlying physical mechanisms, temperature dependent persistent photoconductivity (PPC) and Hall measurements are conducted in AlGaN/GaN heterostructures treated by CF{sub 4} plasma. Weakly temperature dependent 2DEG mobility and much more pronounced PPC effect are observed in the F-treated sample. An energy barrier of 624 meV for electrons recaptured by the F-related centers is extracted from the PPC decay behaviors.
- OSTI ID:
- 21120558
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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