Two-dimensional electron gas in AlGaN/GaN heterostructures
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
- APA Optics, Inc., Blaine, Minnesota 55449 (United States)
The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}
- DOE Contract Number:
- FG03-96ER45604
- OSTI ID:
- 664396
- Report Number(s):
- CONF-970130--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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