Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates
- Univ. of Illinois, Urbana, IL (United States); and others
GaN films and GaN/AlGaN heterostructures have been grown by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be {approximately} 90 kW/cm{sup 2}. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.
- OSTI ID:
- 395000
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALUMINIUM NITRIDES
COMPOSITE MATERIALS
CRYSTAL DEFECTS
DOPED MATERIALS
GALLIUM NITRIDES
LASERS
LIGHT EMITTING DIODES
MAGNESIUM
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POWER DENSITY
REFLECTIVITY
SAPPHIRE
SEMICONDUCTOR MATERIALS
STIMULATED EMISSION
SUBSTRATES
ZINC OXIDES