Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy
- Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)
Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy (MBE) are investigated. It is found that electrical properties of the two-dimensional electron gas (2DEG) in the heterostructures grown on 2.0 deg. -off vicinal substrates are superior to those grown on the 0.5 deg.-off vicinal substrates. Anisotropic phenomenon of the 2DEG mobility in the heterostructures grown on 2.0 deg.-off substrates is demonstrated, which strongly relates to the macrostep structures on the surface. The 2DEG mobility as high as 2018 cm{sup 2}/V s is obtained at the room temperature from the authors' all-MBE-grown sample measured in the direction parallel to the macrostep. It is suggested that the direction effect should be taken into account when designing the device structure.
- OSTI ID:
- 20880054
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 17; Other Information: DOI: 10.1063/1.2364864; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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