MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al{sub 2}O{sub 3}

Journal Article · Fri Dec 14 23:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618160170· OSTI ID:22945104

Rzheutski, M. V.; Vainilovich, A. G.; Svitsiankou, I. E.; Shulenkova, V. A.; Muravitskaya, E. V. ^[1]; Alexeev, A. N.; Petrov, S. I. ^[2]; Yablonskii, G. P. ^[1]

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1. Stepanov Institute of Physics of National Academy of Sciences of Belarus (Belarus)
2. SemiTEq JSC (Russian Federation)

The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGaN layers was determined analyzing thermal decomposition rate of GaN. Based on the information, high electron mobility transistor heterostructures were grown on sapphire substrates using both ammonia and combined plasma-assisted/ammonia MBE modes. The highest achieved 2DEG mobility was 1992 cm{sup 2}/(V s) (at 2DEG density of 1.17 × 10{sup 13} cm{sup –2}) which is the current state-of-the-art level.

• OSTI ID: 22945104
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 16 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
AMMONIA
CRYSTAL GROWTH
ELECTRON MOBILITY
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PLASMA
SAPPHIRE
TRANSISTORS