Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures
- NTO ZAO (Russian Federation)
- Svetlana-Rost ZAO (Russian Federation)
- St. Petersburg State Polytechnic University (Russian Federation)
The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.
- OSTI ID:
- 22470131
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 49; ISSN 1063-7826; ISSN SMICES
- Country of Publication:
- United States
- Language:
- English
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