Response of a SiC Photodiode to Extreme Ultraviolet through Visible Radiation

Journal Article · Sat Jan 01 04:00:00 EST 2005 · Opt. Lett.

DOI:https://doi.org/10.1364/OL.30.003120· OSTI ID:913854

Seely, J; Kjornrattanawanich, B; Holland, G; Korde, R

The responsivity of a type 6H-SiC photodiode in the 1.5-400 nm wavelength range was measured using synchrotron radiation. The responsivity was 0.20 A/W at 270 nm and was less than 0.10 A/W in the extreme ultraviolet (EUV) region. The responsivity was calculated using a proven optical model that accounted for the reflection and absorption of the incident radiation and the variation of the charge collection efficiency (CCE) with depth into the device. The CCE was determined from the responsivity measured in the 200-400 nm wavelength range. By use of this CCE and the effective pair creation energy (7.2 eV) determined from x-ray absorption measurements, the EUV responsivity was accurately modeled with no free parameters. The measured visible-light sensitivity, although low compared with that of a silicon photodiode, was surprisingly high for this wide bandgap semiconductor.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 913854
• Report Number(s): BNL--78422-2007-JA
• Journal Information: Opt. Lett., Journal Name: Opt. Lett. Journal Issue: 23 Vol. 30; ISSN OPLEDP; ISSN 0146-9592
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ABSORPTION
CHARGE COLLECTION
EFFICIENCY
OPTICAL MODELS
PHOTODIODES
RADIATIONS
REFLECTION
SENSITIVITY
SILICON
SYNCHROTRON RADIATION
VISIBLE RADIATION
WAVELENGTHS
national synchrotron light source