Temperature Dependence of the EUV Responsivity of Silicon Photodiodes

Journal Article · Sun Jan 01 04:00:00 EST 2006 · IEEE Trans. Elect. Device

DOI:https://doi.org/10.1109/TED.2005.862500· OSTI ID:914255

Kjornrattanawanich, B; Korde, R; Boyer, C; Holland, G; Seely, J

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 914255
• Report Number(s): BNL--78823-2007-JA
• Journal Information: IEEE Trans. Elect. Device, Journal Name: IEEE Trans. Elect. Device Vol. 53; ISSN IETDAI; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
PHOTODIODES
RADIATION SOURCES
SILICIDES
SILICON
SYNCHROTRONS
TEMPERATURE DEPENDENCE
WAVELENGTHS
national synchrotron light source