Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)
- OSTI ID:
- 22066641
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 10 Vol. 42; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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