Germanium- and tellurium-doped GaAs for non-alloyed {ital p}-type and {ital n}-type ohmic contacts
- Department of Physics, Auburn University, Alabama 36849-5311 (United States)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to {ital p}-GaAs while Te was used for the {ital n}-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, {ital r}{sub {ital c}}, as low as {ital r}{sub {ital cp}}=2.9{times}10{sup {minus}6} ohm-cm{sup 2} for Ge doping of {ital p}=({ital N}{sub {ital a}}{minus}{ital N}{sub {ital d}})=6.0{times}10{sup 19} holes/cm{sup 3} was measured for {ital p}-contacts and {ital r}{sub {ital cn}}=9.6{times}10{sup {minus}5} ohm-cm{sup 2 }was measured for Te doping of {ital n}=({ital N}{sub {ital d}}{minus}{ital N}{sub {ital a}})=8.9{times}10{sup 18} electrons/cm{sup 3 }for GaAs metallized with non-alloyed contacts of Ti/Al. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 90458
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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