Shallow Si/Pd-based ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:536235

Hao, P H; Wang, L C ^[1]; Chang, J C.P. ^[2]; Kuo, J M ^[3]

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1. Texas A and M Univ., College Station, TX (United States)
2. Purdue Univ., West Lafayette, IN (United States)
3. AT and T Labs., Murray Hill, NJ (United States)

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.

• OSTI ID: 536235
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM PHOSPHIDES
ANNEALING
CHEMICAL REACTIONS
COMPOSITE MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
PALLADIUM
SILICON
SUBSTRATES