Pd/Zn/Pd ohmic contact to p-InP
- Texas A and M Univ., College Station, TX (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
- Univ. of California, San Diego, La Jolla, CA (United States)
- Univ. of Minnesota, Minneapolis, MN (United States). Chemical Engineering and Materials Science
A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10{sup {minus}5} {Omega}-cm{sup 2}) has been obtained for contacts with an atomic ratio of Zn to Pd of {approximately}1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn{sub 3}P{sub 2}/InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn{sub 3}P{sub 2}/InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (> 600 {angstrom}) sample started to show abnormal data distribution for annealing temperatures higher than 480 C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
- OSTI ID:
- 536236
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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