Ohmic contact formation on InP by pulsed laser photochemical doping

Journal Article · Thu May 15 04:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91345· OSTI ID:5416835

Deutsch, T F; Ehrlich, D J; Osgood, Jr, R M; Liau, Z L

Pulsed UV laser photolysis of metal alkyls combined with laser heating has been used to introduce Cd or Zn into p-InP. Ohmic contacts with specific contact resistances of 1.9 x 10/sup -4/ ..cap omega.. cm/sup 2/ have been formed using a pulsed ArF laser to photolyze Cd(CH/sub 3/)/sub 2/.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5416835
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CADMIUM
CHEMICAL REACTIONS
CHEMISTRY
DECOMPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
GAS LASERS
HEATING
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER-RADIATION HEATING
LASERS
MATERIALS
METALS
ORGANIC COMPOUNDS
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOCHEMISTRY
PHOTOLYSIS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
ULTRAVIOLET RADIATION
ZINC