Transparent ohmic contacts to epitaxial InP cells
Conference
·
OSTI ID:191154
- Centre National de la Recherche Scientifique, Valbonne (France). Centre de Recherche sur l`Hetero-Epitaxie et ses Applications
- CNRS, Nice (France). Lab. de Physique de la Mateiere Condensee
In this paper the authors report the deposition of transparent ohmic contacts of indium tin oxide by laser ablation to homoepitaxial InP cells. This method provides technologically simple, low resistance contacts at low deposition temperatures and should not damage the junction of shallow emitter n{sup +}/p structures that are required due to the high surface recombination velocity of InP.
- OSTI ID:
- 191154
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANTIREFLECTION COATINGS
DOPED MATERIALS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FABRICATION
FILL FACTORS
GERMANIUM
GOLD
INDIUM OXIDES
INDIUM PHOSPHIDE SOLAR CELLS
LASERS
MAGNESIUM FLUORIDES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL VAPOR DEPOSITION
SILICON
SPECTRAL RESPONSE
TIN OXIDES
VAPOR PHASE EPITAXY
ZINC
ZINC SULFIDES
36 MATERIALS SCIENCE
ANTIREFLECTION COATINGS
DOPED MATERIALS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FABRICATION
FILL FACTORS
GERMANIUM
GOLD
INDIUM OXIDES
INDIUM PHOSPHIDE SOLAR CELLS
LASERS
MAGNESIUM FLUORIDES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL VAPOR DEPOSITION
SILICON
SPECTRAL RESPONSE
TIN OXIDES
VAPOR PHASE EPITAXY
ZINC
ZINC SULFIDES