Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Transparent ohmic contacts to epitaxial InP cells

Conference ·
OSTI ID:191154
; ;  [1]; ; ;  [2]
  1. Centre National de la Recherche Scientifique, Valbonne (France). Centre de Recherche sur l`Hetero-Epitaxie et ses Applications
  2. CNRS, Nice (France). Lab. de Physique de la Mateiere Condensee
In this paper the authors report the deposition of transparent ohmic contacts of indium tin oxide by laser ablation to homoepitaxial InP cells. This method provides technologically simple, low resistance contacts at low deposition temperatures and should not damage the junction of shallow emitter n{sup +}/p structures that are required due to the high surface recombination velocity of InP.
OSTI ID:
191154
Report Number(s):
CONF-941203--; ISBN 0-7803-1459-X
Country of Publication:
United States
Language:
English